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g d s gate drain source to-220ab AUIRF9Z34N s d g d features advanced planar technology p-channel mosfet dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ www.irf.com 1 v (br)dss -55v r ds(on) max. 0.10 i d -19a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.2 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -5.0 6.8 180 -10 68 0.45 20 max. -19 -14 -68 -55 to + 175 300 10 lbf in (1.1n m) automotive grade

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*% 5'() 6 ,3 7 r is measured at tj approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -55 ??? ??? v . 0.0 0.10 .0 .0 . a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 35 q gs gate-to-source charge ??? ??? 79 nc q gd gate-to-drain ("miller") charge ??? ??? 16 t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 55 ??? t d(off) turn-off delay time ??? 30 ??? ns t f fall time ??? 41 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 620 ??? c oss output capacitance ??? 280 ??? pf c rss reverse transfer capacitance ??? 140 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -19 (body diode) a i sm pulsed source current ??? ??? -68 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 54 82 ns q rr reverse recovery charge ??? 110 160 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = -25v ? = 1.0mhz, see fig. 5 t j = 25c, i f = -10a di/dt = 100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -10a v ds = v gs , i d = -250 a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 150c mosfet symbol v dd = -28v i d = -10a r g = 13 , 10, 0 showing the integral reverse p-n junction diode. conditions r d = 2.6 , . 10 v gs = 0v conditions v ds = -25v, i d = -10a i d = -10a v ds = -44v v gs = 20v v gs = -20v v gs = -10v, see fig. 6 & 13

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%'()(* $ * !# +, ! ,-, qualification information ? to-220 n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m3 (+/- 250v) ??? aec-q101-002 human body model class h1b (+/- 800v) ??? aec-q101-001

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23!2' 1 10 100 0.1 1 10 100 d ds 20 s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -25v 20 s pulse width ds t = 175c j 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -17a d

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23!6' ,1# 65 1, 23!'!1# 5 1, 23!5 71, 0 4 8 12 16 20 0 10203040 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -10a v = -44v v = -28v d ds ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10 s 100 s 1ms t = 25c t = 175c single pulse c j 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss

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